Process for fabricating doped zinc oxide microsphere gel

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

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252519, 25231501, 252500, 264 61, 264 66, 338 20, 338 21, 423593, H01C 1016, H01B 108

Patent

active

050629930

ABSTRACT:
A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

REFERENCES:
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patent: 4297250 (1981-10-01), Gupta et al.
patent: 4510112 (1985-04-01), Lauf
patent: 4758469 (1988-07-01), Lange
patent: 4811164 (1989-03-01), Ling et al.
patent: 4996510 (1991-02-01), Beaker et al.

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