Process for fabricating diffused complementary field effect tran

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148187, 148189, H01L 21225

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active

040452590

ABSTRACT:
In a process for fabricating complementary FETS, wherein a first insulative layer has apertures therein, a second insulative layer doped with N-type impurities is formed over the area in which an N channel device is to be formed and is diffused in a non-oxidizing atmosphere through apertures in the first insulative layer to form the source and drain of an N channel device. Immediately thereafter, an atmosphere containing a P-type impurity is introduced to deposit and diffuse P-type impurities through exposed apertures in the first insulative layer to form the source and drain of a P channel device.

REFERENCES:
patent: 3614829 (1971-10-01), Burgess et al.
patent: 3700507 (1972-10-01), Murray
patent: 3750268 (1973-08-01), Wang
patent: 3759763 (1973-09-01), Wang
patent: 3806371 (1974-04-01), Barone
patent: 3821781 (1974-06-01), Chang
patent: 3837935 (1974-09-01), Maeda
patent: 3865654 (1975-02-01), Chang et al.
patent: 3892609 (1975-07-01), Coppen
patent: 3912559 (1975-10-01), Harigaya et al.
patent: 3921283 (1975-11-01), Shappir

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