Process for fabricating dielectrically isolated devices utilizin

Details Process for fabricating dielectrically isolated devices utilizin Process for fabricating dielectrically isolated devices utilizin

1984-12-13

1986-04-15

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576T, 29580, 148 15, 148174, 148DIG85, 148DIG86, 148DIG97, 148DIG122, 148DIG123, 357 49, H01L 2120, H01L 2176

Patent

active

045818142

ABSTRACT:
The efficacy of dielectrically isolated device formation on a substrate is substantially enhanced through a specific set of processing steps. In particular, before silicon oxide regions, e.g., gate oxide regions, are produced, bulk polycrystalline areas are heat treated to substantially increase their polycrystalline silicon grain size.

REFERENCES:
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patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4173674 (1979-11-01), Mimura et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4479846 (1984-10-01), Smith et al.
patent: 4494303 (1985-01-01), Celler et al.
Suzuki et al., "Deformation of Polycrystalline-Silicon . . . Oxide Covered . . . " J. Electrochem. Soc., vol. 124, No. 11, Nov. 1977, pp. 1776-1780.
Suzuki et al., "Deformation in Dielectric-Isolated . . . Support Structure" J. Electrochem. Soc., vol. 127, No. 7, Jul. 1980, pp. 1537-1542.
Ouwens et al., "Recrystallization . . . in Polycrystalline Silicon" Appl. Phys. Letters, vol. 25, No. 10, May 15, 1975, pp. 569-571.

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