Process for fabricating CMOS Device

Details Process for fabricating CMOS Device Process for fabricating CMOS Device

1996-10-03

1997-07-22

Niebling, John

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 57, 437 58, 257274, 257336, 257338, 257344, 257371, 257408, H01L 21265

Patent

active

056503415

ABSTRACT:
The present invention is a process used for fabricating a CMOS device, which includes (a) forming a first photoresist over the gate conducting layer, (b) define a first gate upon one of the p-type and the n-type MOS regions, (c) executing a first ion implantation in order to form a first lightly doped drain (LDD) on the one of the p-type and the n-type MOS regions, (d) forming a first gate sidewall on the first gate, (e) executing a second ion implantation in order to form a first source and a first drain on the one of the p-type and the n-type MOS regions, (f) forming a second photoresist over the gate conducting layer, (g) eliminating a portion of the second photoresist and another portion of the gate conducting layer in order to define a second gate upon the other one of the p-type and the n-type MOS regions, (h) performing a third ion implantation in order to form a second lightly doped drain (LDD) on the the other portion of the p-type and the n-type MOS regions, (i) selectively forming a specific oxide on the other one of the p-type and the n-type MOS regions, which is not masked by the second gate, (j) removing a portion of the specific oxide in order to form a second gate sidewall on the second gate, (k) executing a fourth ion implantation in order to form a second source and a second drain on the other one of the p-type and the n-type MOS regions, and (l) eliminating a remaining portion of the second photoresist. According to the present invention which can not only reduce the cost and time but also promote the performance of the fabricated CMOS device.

REFERENCES:
patent: 4764477 (1988-08-01), Chang et al.
patent: 4978626 (1990-12-01), Poon et al.
patent: 4997782 (1991-03-01), Bergonzoni
patent: 5006477 (1991-04-01), Farb
patent: 5015595 (1991-05-01), Wollesen
patent: 5024959 (1991-06-01), Pfiester
patent: 5024960 (1991-06-01), Haken
patent: 5141890 (1992-08-01), Haken
patent: 5166087 (1992-11-01), Kakimoto et al.
patent: 5439834 (1995-08-01), Chen
patent: 5516711 (1996-05-01), Wang
patent: 5521106 (1996-05-01), Okabe
patent: 5547885 (1996-08-01), Ogoh
patent: 5585299 (1996-12-01), Hsu

Affiliated with

Also associated with

Rating

Process for fabricating CMOS Device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating CMOS Device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating CMOS Device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1559634