Process for fabricating an integrated circuit device by forming

Details Process for fabricating an integrated circuit device by forming Process for fabricating an integrated circuit device by forming

1993-02-24

1994-05-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437235, 437238, 427344, 427387, 4273977, H01L 21302

Patent

active

053107209

ABSTRACT:
A thick planarization layer of silicon dioxide that is heat resistant is provided by coating a polysilazane layer over a substrate having steps and firing the polysilazane layer in an oxygen-containing atmosphere to convert the polysilazane to silicon dioxide. The temperature of this conversion may be as low as 400.degree. to 450.degree. C. while a higher firing or curing temperature is preferable to obtain a more densified oxide layer.

REFERENCES:
patent: 3962004 (1976-06-01), Sonneborn
patent: 4103045 (1978-07-01), Lesaicherre et al.
patent: 4519872 (1985-05-01), Anderson, Jr. et al.
patent: 4599243 (1986-07-01), Sachder et al.
patent: 4707218 (1987-11-01), Giammario et al.
patent: 4784975 (1988-11-01), Hoffman et al.
Stanley Wolf, Silicon Processing for the VLS, ERA, vol. 2, Lattice Press, Sunset Beach, Calif., 1990, pp. 194-198, 211-212.
David S. Ballance et al., "Low Temperature Reflow Planarization Using A Novel Spin-On Interlevel Dielectric", Jun. 9-10, 1992, VMIC Conference, pp. 180-186.
H. Kotani et al., "An Advanced Multilevel Interconnection Technology For 0.4-.mu.m High Performance Devices", Jun. 9-10, 1992, VMIC Conference, pp. 15-21.

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