Process for fabricating an avalanche photodiode

Details Process for fabricating an avalanche photodiode Process for fabricating an avalanche photodiode

1987-08-21

1989-06-20

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 5, 357 30, H01L 3118

Patent

active

048409162

ABSTRACT:
Disclosed is an avalanche photodiode wherein a light absorption layer and a multiplication layer are first grown on substrate. The multiplication layer is then mesa-etched and another semiconductor layer is second grown on the mesa-etched multiplication layer. A dopant having a conductivity opposite to that of the above layers is introduced from the top of the another semiconductor layer to form a doped region extending inside the mesa portion and p-n junction is therefore formed inside the mesa-etched portion. This causes the distribution of multiplication in the active area to become uniform, since the rough surface of the top of the mesa-etched portion exists outside the multiplication region.

REFERENCES:
patent: 4442444 (1984-04-01), Osaka
patent: 4481523 (1984-11-01), Osaka et al.
Japanese Journal of Applied Physics, Supplements, vol. 22, No. 22-1, 1983, pp. 291-294, Tokyo, JP; K. Yasuda et al.
Applied Physics Letters, vol. 35, No. 6, Sep. 15, 1979, pp. 466-468.
Applied Physics Letters, vol. 45, No. 7, Oct. 1, 1984, pp. 759-761.

Affiliated with

Also associated with

Rating

Process for fabricating an avalanche photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating an avalanche photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating an avalanche photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-525313