Etching a substrate: processes – Etching to produce porous or perforated article
Reexamination Certificate
2009-01-14
2010-12-14
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Etching to produce porous or perforated article
C216S057000, C216S080000, C216S097000
Reexamination Certificate
active
07850863
ABSTRACT:
A process for fabricating a hydrogenated amorphous silicon carbide film having through-pores includes the formation on a substrate of a film consisting of an amorphous hydrogenated silicon carbide matrix in which silicon oxide nanowires are dispersed therethrough, and then the selective destruction by a chemical agent of the silicon oxide nanowires present in the film formed at step a). Applications include microelectronics and micro-technology, in all fabrication processes that involve the degradation of a sacrificial material by diffusion of a chemical agent through a film permeable to this agent for the production of air gaps, in particular the fabrication of air-gap interconnects for integrated circuits.
REFERENCES:
patent: 6139626 (2000-10-01), Norris et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2005/0142385 (2005-06-01), Jin
patent: 2005/0196950 (2005-09-01), Steinhogl et al.
patent: 2006/0270201 (2006-11-01), Chua et al.
patent: 2007/0190799 (2007-08-01), Wang et al.
patent: 2008/0038934 (2008-02-01), Vrtis et al.
patent: WO 2006/061318 (2006-06-01), None
French Patent Office Search Report, dated Aug. 29, 2008.
M. J. Loboda, “New solutions for internal dielectrics using trimethylsilane-based PECVD process,” Elsevier Microelectronic Engineering, vol. 50, pp. 15-23, 2000, XP-002493946.
Sonnenburg et al., “Synthesis and characterization of SiC materials with hierarchical porosity obtained by replication techniques,” Physical Chemistry Chemical Physics, vol. 8, pp. 3561-3566, 2006, XP-002493853.
Brinks Hofer Gilson & Lione
Commissariat a l''Energie Atomique
Tran Binh X
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