Metal working – Method of mechanical manufacture – Electrical device making
Patent
1976-06-30
1978-02-28
Mehr, Milton S.
Metal working
Method of mechanical manufacture
Electrical device making
427 63, 29577C, 307245, H05K 300
Patent
active
040757560
ABSTRACT:
A fabrication method for integrated circuits is disclosed wherein a structure is formed on one side of a supporting substrate which provides a ground plane with "X" wiring on one side and "Y" wiring on the other side thereof. The method includes a number of alternative initial planarization steps which permits the resulting device to be substantially planar, thereby allowing it to be used as a substrate for preparation of high density integrated circuits. A first planarization step includes the deposition of a niobium thin film on a doped silicon substrate; the delineation of the desired niobium "X" wiring pattern using well-known photolithographic and etching techniques, leaving the photoresist in place to protect the niobium; the anodization of exposed silicon substrate portions to form silicon dioxide surrounding the niobium to a higher level than the niobium; and the removal of the photoresist.
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patent: 3366519 (1968-01-01), Pritchard et al.
patent: 3385773 (1968-05-01), Frantzen
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patent: 3849276 (1974-11-01), Greiner
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patent: 3988823 (1976-11-01), Hu
patent: 3988824 (1976-11-01), Bodway
Kircher Charles John
Zappe Hans Helmut
International Business Machines - Corporation
Kilgannon, Jr. Thomas J.
Mehr Milton S.
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