Process for fabricating a thin film semiconductor device

Details Process for fabricating a thin film semiconductor device Process for fabricating a thin film semiconductor device

1991-11-15

1994-12-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437247, 437913, 148DIG150, H01L 21265

Patent

active

053729587

ABSTRACT:
There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.

REFERENCES:
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5141885 (1992-08-01), Yoshida et al.
Hatalis et al. "High-Performance Thin Film Transistors in Low Temperature Crystallized by LPCVD Amorphous Silicon Films"; IEEE Electron Device Letter, 8(8), Aug. 1987, pp. 361-364.
Thomas W. Little, et al.; Low Temperature Poly-Si TFTs Using Solid Phase . . . The Japan Society of Applied Physics 30L 84; uL91 pp. 644-646, (1991).

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