Process for fabricating a semiconductor read only memory

Details Process for fabricating a semiconductor read only memory Process for fabricating a semiconductor read only memory

1989-12-15

1991-01-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 62, 437200, H01L 2170

Patent

active

049818120

ABSTRACT:
In a process for fabricating a semiconductor read only memory, a gate oxidation film is grown on a semiconductor substrate, and a first polycrystalline silicon layer is then grown on the gate oxidation film. The semicondctor substrate is provided with element separating trenches each passing through the gate oxidation film. Then, the element separating trenches are buried with a seccond polycrystalline silicon layer which provides no contamination for a channel portion and the gate oxidation film.

REFERENCES:
patent: 4473598 (1984-10-01), Ephrath et al.
patent: 4546538 (1985-10-01), Suzuki
patent: 4589193 (1986-05-01), Goth et al.
patent: 4740480 (1988-04-01), Doka
patent: 4851366 (1989-07-01), Blanchard

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