Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1997-09-12
2000-04-04
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 47, 438 29, 372 43, 372 44, H01L 2102
Patent
active
060460652
ABSTRACT:
An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
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D. I. Babic et al, "Room-Temperature Continuous-Wave Operation of 1.54-Mu M Vertical-Cavity Lasers", IEEE Photonics Technology Letters, vol. 7, No. 11, Nov. 1, 1995, pp. 1225-1227.
Patent Abstracts of Japan, vol. 013, No. 461 (C-645), Oct. 18, 1989 corresponding to JP 01 179797 A, JP 0 179798 A (NEC Corp) dated Jul. 17, 1989.
Brillouet Fran.cedilla.ois
Fortin Cathrine
Goldstein Leon
Jacquet Joel
Lafragette Jean Luc
Alcatel
Bowers Charles
Christianson Keith
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