Process for fabricating a semiconductor on insulator semiconduct

Details Process for fabricating a semiconductor on insulator semiconduct Process for fabricating a semiconductor on insulator semiconduct

1984-11-26

1986-04-22

Ozaki, George T.

Metal treatment

Compositions

Heat treating

29576F, 148175, 148188, 148171, 156605, H01L 21388

Patent

active

045840253

ABSTRACT:
A process for fabricating a substrate having a dielectrically isolated region, using energy beam recrystallization. An island of polysilicon is formed on an insulating substrate and a cap containing a dopant is coated on the entire surface of the substrate. A laser beam is irradiated through the cap, and the polysilicon is recrystallized to form a doped first single crystal silicon layer. A second single crystal silicon layer is grown over the first single crystal layer. The first single crystal layer is used as a buried layer, and a semiconductor device is fabricated in the second single crystal layer. This process avoids the existence of crystal imperfections at the boundaries of the single crystal layers.

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Appl. Phys. Lett. 40(5), "Recrystallization of Si on Amorphous Substrates by Doughnut-Shaped CW Ar Laser Beam", Kawamura et al., Mar. 1, 1982, pp. 394-395.
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