Process for fabricating a semiconductor laser device

Details Process for fabricating a semiconductor laser device Process for fabricating a semiconductor laser device

1994-06-01

1995-03-07

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

148DIG95, H01L 2120

Patent

active

053957920

ABSTRACT:
There is provided a process for fabricating a highly reliable semiconductor laser device operable at a low current with an increased yield, which process includes the steps of: (a) forming a lower clad layer on a semiconductor substrate; (b) forming an active layer of a material larger in refractive index and smaller in forbidden band width than the lower clad layer; (c) forming a first upper clad layer of a material smaller in refractive index and larger in forbidden band width than the active layer; (d) forming an etch stop layer made of GaAs on the first upper clad layer; (e) forming a current-blocking layer of a material smaller in refractive index and larger in forbidden band width than the first upper clad layer; (f) forming a stripe cavity by etching at least a portion of the current-blocking layer down to the etch stop layer; (g) evaporating the etch stop layer remaining in the stripe cavity; (h) forming a second upper clad layer of a material smaller in refractive index and larger in forbidden band width than the active layer while larger in refractive index and smaller in forbidden band width than the current-blocking layer; and (i) forming a contact layer of a material larger in refractive index and smaller in forbidden band width than the active layer.

REFERENCES:
patent: 4567060 (1986-01-01), Hayakawa et al.
patent: 4734385 (1988-03-01), Mihashi et al.
patent: 4855250 (1989-08-01), Yamamoto et al.
patent: 5153148 (1992-10-01), Sakiyama et al.
patent: 5268328 (1993-12-01), Mori et al.

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