Process for fabricating a semiconductor integrated circuit devic

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 34, 437 43, 437 48, H01L 2170

Patent

active

057312192

ABSTRACT:
Herein disclosed is a semiconductor integrated circuit device comprising an SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs, and a method of forming this device. The gate electrodes of the drive MISFETs and of the transfer MISFETs of the memory cell, and the word lines, are individually formed of different conductive layers. The two transfer MISFETs of the memory cell have their individual gate electrodes connected with two respective word lines spaced from each other and extended in an identical direction. The source line is formed of a conductive layer identical to that of the word line. An oxidation resisting film is formed on the gate electrodes of the drive MISFETs so as to reduce stress caused by oxidization of edge portions of these gate electrodes, and to reduce a resulting leakage current. A thickness of an oxide film formed on gate electrodes of the transfer MISFETs and word lines is thicker than an oxide film formed on gate electrodes of the drive MISFETs, so that data line pads can be formed in self-alignment with the oxide film and side wall spacers on the gate electrodes of the transfer MISFETs.

REFERENCES:
patent: 4830974 (1989-05-01), Chang et al.
patent: 4833096 (1989-05-01), Huang et al.
patent: 4859619 (1989-08-01), Wu et al.
patent: 5100819 (1992-03-01), Gill et al.
patent: 5158902 (1992-10-01), Hanada
patent: 5427966 (1995-06-01), Komori et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for fabricating a semiconductor integrated circuit devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating a semiconductor integrated circuit devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating a semiconductor integrated circuit devic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2288286

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.