Process for fabricating a semiconductor electrostatic discharge

Details Process for fabricating a semiconductor electrostatic discharge Process for fabricating a semiconductor electrostatic discharge

1996-03-19

1996-12-17

Quach, T. N.

Fishing, trapping, and vermin destroying

437 34, 437 58, 437200, H01L 218238

Patent

active

055852998

ABSTRACT:
Disclosed is a process for fabricating a semiconductor device having both a functional region and an electrostatic discharge (ESD) protective region formed on the same substrate. A gate oxide layer is formed on both the functional region and the ESD protective region and a polysilicon layer is formed on the gate oxide layer. A mask is used to etch the polysilicon layer and the gate oxide layer to form gate electrode and also expose part of the silicon substrate. Ions are implanted to form a lightly doped source/drain electrode. An ESD mask is used to selectively remove part of the oxide layer on the functional region, thus forming an isolator on lateral sides of the gate electrode in the functional region. Ions are then implanted to form a heavily doped region and lightly doped source/drain electrode. After that, a metallization layer is formed by sputtering deposition and then rapid thermal annealing and etching are performed to form self-aligning TiSi.sub.2 layer on the gate electrode and on exposed surface of the source/drain electrode. Then the ESD mask is used again to selectively remove part of the oxide layer on the ESD protective region. Finally, ions are implanted to form a heavily doped region. Using the same ESD mask to construct both the ESD protective region and the functional region provides considerable cost savings.

REFERENCES:
patent: 4345366 (1982-08-01), Brower
patent: 4528744 (1985-07-01), Shibata
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4891326 (1990-01-01), Koyanagi
patent: 5023190 (1991-06-01), Lee et al.
patent: 5141890 (1992-08-01), Haken
patent: 5166087 (1992-11-01), Kakimoto et al.
patent: 5246872 (1993-09-01), Mortensen
patent: 5399513 (1995-03-01), Liou et al.
patent: 5516717 (1996-05-01), Hsu

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