Process for fabricating a semiconductor diffraction grating...

Details Process for fabricating a semiconductor diffraction grating... Process for fabricating a semiconductor diffraction grating...

2005-05-17

2005-05-17

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S481000, C438S700000, C438S778000

Reexamination Certificate

active

06893891

ABSTRACT:
An optical device including a first semiconductor layer on which is deposited a dielectric layer that is patterned and etched to form dielectric strips that are part of a diffraction grating layer. A second semiconductor layer is grown on the first semiconductor layer between the dielectric strips to provide alternating dielectric sections and semiconductor sections. Via channels can be patterned and etched through the second semiconductor layer so that dielectric strips can be removed to form dielectric air channels.

REFERENCES:
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6365428 (2002-04-01), Zubrzycki et al.
patent: 6468823 (2002-10-01), Scherer et al.
patent: 6649439 (2003-11-01), Nesnidal et al.

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