Process for fabricating a semiconductor device with selective gr

Details Process for fabricating a semiconductor device with selective gr Process for fabricating a semiconductor device with selective gr

1989-11-20

1990-08-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437193, 437200, 148DIG19, 357 67, H01L 21283, H01L 21331

Patent

active

049525212

ABSTRACT:
A metal or metal silicide layer (37) is selectively grown on a nucleating layer (28) with a predetermined pattern on an insulating layer and on a substrate below an opening in an insulating layer, to form a metal or metal silicide electrode in contact with the substrate external base (36) the opening and extending therefrom along the pattern of the nucleating layer. This process is advantageous in that a high electroconductive metal or metal silicide layer having a precise pattern can be easily formed.

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Hall et al., Tungsten and Other Refractory Metals for VLSI Applications III, MRS Proc. 1987, pp. 31-237.

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