Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Thermally responsive
Reexamination Certificate
2007-03-27
2007-03-27
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Thermally responsive
C438S050000, C438S052000, C438S053000, C438S704000, C438S705000
Reexamination Certificate
active
10884867
ABSTRACT:
A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer.
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D'Arrigo Giuseppe
Spinella Rosario Corrado
Au Bac H.
Bongini Stephen
Fleit Kain Gibbons Gutman Bongini & Bianco P.L.
Jorgenson Lisa K.
Smith Zandra V.
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