Process for fabricating a semiconductor device

Details Process for fabricating a semiconductor device Process for fabricating a semiconductor device

2006-11-14

2006-11-14

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

C438S583000, C257SE21318

Reexamination Certificate

active

07135386

ABSTRACT:
By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100 ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well.

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