Process for fabricating a semiconductor device

Details Process for fabricating a semiconductor device Process for fabricating a semiconductor device

1991-11-14

1992-12-22

Maples, John S.

Fishing, trapping, and vermin destroying

437187, 437195, 437228, 437238, H01L 2144, H01L 21465

Patent

active

051734486

ABSTRACT:
The present invention provides a process for fabricating a semiconductor device including the steps of: depositing a CVD film by a bias ECRCVD process on a wiring layer having an intended contact region in which a wiring line are made wider than in other regions; coating planarly the CVD film with a resist film; etching the resist film back so as to expose a protuberance of the CVD film formed above the inteded contact region; and etching the protuberance and the CVD film thereunder to open a contact hole down to the intended contact region of the wiring layer.

REFERENCES:
patent: 4859618 (1989-08-01), Shikata et al.
patent: 4910169 (1990-03-01), Hoshino

Affiliated with

Also associated with

Rating

Process for fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-975176