Process for fabricating a semiconductor device

Fishing – trapping – and vermin destroying

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Details

437187, 437195, 437228, 437238, H01L 2144, H01L 21465

Patent

active

051734486

ABSTRACT:
The present invention provides a process for fabricating a semiconductor device including the steps of: depositing a CVD film by a bias ECRCVD process on a wiring layer having an intended contact region in which a wiring line are made wider than in other regions; coating planarly the CVD film with a resist film; etching the resist film back so as to expose a protuberance of the CVD film formed above the inteded contact region; and etching the protuberance and the CVD film thereunder to open a contact hole down to the intended contact region of the wiring layer.

REFERENCES:
patent: 4859618 (1989-08-01), Shikata et al.
patent: 4910169 (1990-03-01), Hoshino

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