Process for fabricating a Schottky-barrier gate field effect tra

Details Process for fabricating a Schottky-barrier gate field effect tra Process for fabricating a Schottky-barrier gate field effect tra

1982-03-23

1986-07-22

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, H07L 21263, H07L 2126

Patent

active

046010955

ABSTRACT:
A process for fabricating a Schottky-barrier gate field effect transistor, consists of forming an active layer of one electrically conductive type semiconductor crystal on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer having a first active layer whose thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a carrier concentration which is substantially equal to that of the first active layer and having a larger thickness than that of the first active layer and provided on both sides of the first active layer; the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part.

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