Process for fabricating a MOS device having protection against e

Details Process for fabricating a MOS device having protection against e Process for fabricating a MOS device having protection against e

1993-11-16

1994-11-22

Thomas, Tom

Fishing, trapping, and vermin destroying

437 59, 437 51, 437904, H01L 21265

Patent

active

053669088

ABSTRACT:
A MOS device having protection against electrostatic discharge includes a protection diode formed below the MOS device so that excess charge buildup in the MOS device is conducted away from the MOS device by the protection diode.

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"Gate Oxide Damage from Polysilicon Etching" by Calvin T. Gabriel, VLSI Technology, Inc., Technology Development Department, J. Vac. Sci. Technol. B9(2), Mar./Apr. 1991.

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