Process for fabricating a metallization structure in a semicondu

Details Process for fabricating a metallization structure in a semicondu Process for fabricating a metallization structure in a semicondu

1994-02-03

1995-07-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437192, 437203, 437245, H01L 2144

Patent

active

054299896

ABSTRACT:
A process for fabricating a metallization structure includes the formation of an interlayer (20) using an MOCVD deposition process. A metal-organic precursor, having as one component tungsten, is used to deposit the interlayer (20) onto a surface region (18) of a substrate (10) at the bottom of an opening (16). The MOCVD deposition process forms a conformal layer which evenly coats all surfaces of the opening (16). Next, a refractory metal layer (22) is deposited to overlie the interlayer (20). Because of conformal nature of the MOCVD deposition process, refractory metal layer can be formed using corrosive gasses such as tungsten hexafluoride.

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