Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-04-23
1978-07-25
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29577R, 29578, 29580, 148174, 148175, 156647, 156653, 156657, 156662, 357 13, 357 20, 357 23, 357 41, 357 55, 357 59, 357 60, H01L 2122, H01L 21302, H01L 2978
Patent
active
041027140
ABSTRACT:
A structure and process are disclosed for making a low-voltage breakdown p-n junction in a semiconductor substrate. The process comprises the step of etching a V-shaped groove in a semiconductor substrate of a first conductivity type, with an anistropic etchant, followed by depositing a layer of epitaxial semiconductor material of a second conductivity type in the V-shaped groove. There results a p-n junction with a small radius of curvature at the apex of the V-shaped groove having a correspondingly low breakdown voltage.
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Walker; B. J., "Low-Voltage Protective Diode" I.B.M. Tech. Discl. Bull., vol 11, No. 11, Apr. 1969, p. 1479.
Declercq; M. J., "New C-MOS . . . , Anisotropic Etching of Silicon" IEEE J. Solid-State Circuits, vol. SC-10, No. 4, Aug. 1975, pp. 191-197.
Wu; L. L., "Doped P 0 N Pockets for Complementary FETs" I.B.M. Tech. Discl. Bull., vol. 15, No. 7, Dec. 1972, p. 2279.
De La Moneda Francisco H.
DeBar David E.
Dean R.
Hoel John E.
International Business Machines - Corporation
Saba W. G.
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