Process for fabricating a logic structure utilizing polycrystall

Details Process for fabricating a logic structure utilizing polycrystall Process for fabricating a logic structure utilizing polycrystall

1981-05-08

1983-12-06

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29576W, 29578, 29591, 148174, 148175, 148187, 148188, 357 15, 357 51, 357 59, 357 67, 357 71, 357 92, 427 84, 427 89, H01L 2120, H01L 2176

Patent

active

044184689

ABSTRACT:
An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.

REFERENCES:
patent: 3486029 (1969-12-01), Barrett et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 4127931 (1978-12-01), Shiba
patent: 4169746 (1979-10-01), Ipri et al.
patent: 4190949 (1980-03-01), Ikeda et al.
Isaac et al., "Method for Fabricating a Self-Aligned Vertical PNP Transistor", I.B.M. Tech. Discl. Bull., vol. 22, No. 8A, Jan. 1980, pp. 3393-3396.
Berger et al., "Cross-Coupled-Transistor with Stacked Interconnection Lines", I.B.M. Tech. Discl. Bull., vol. 21, No. 12, May 1979, p. 4886.
Roesner et al., "New High Speed I.sup.2 L Structure", IEEE J. Solid-State Circuits, vol. SC-12, No. 2, Apr. 1977, pp. 114-118.
Okada et al., "New Polysilicon Process-Bipolar Device-PSA Technology", IEEE J. Solid-State Circuits, vol. SC-14, No. 2, Apr. 1979, pp. 307-311.

Affiliated with

Also associated with

Rating

Process for fabricating a logic structure utilizing polycrystall does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating a logic structure utilizing polycrystall, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating a logic structure utilizing polycrystall will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2023005