Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1998-07-23
2000-04-18
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
G03F 900
Patent
active
060513462
ABSTRACT:
The invention provides an improved process for fabricating masks suitable for use in SCALPEL and similar electron-based or ion-based lithographic processes. Specifically, the process allows use of commercially-available (100) oriented silicon substrates, and better control over the profiles of mask struts. Specifically, the struts of the mask are formed by plasma etching, using a fluorine-based gas, and a unique multilayer mask blank is fabricated to promote successful use of the plasma etch. According to an embodiment of the process, an etch stop layer is deposited onto the front surface of a silicon substrate, and a membrane layer is deposited over the etch stop layer. A scattering layer, typically tungsten, is deposited over the membrane layer. A patterning layer is deposited on the back surface of the substrate, and the desired grillage pattern for the struts is patterned into the patterning layer. The grillage structure is then etched into the silicon, to form the struts, by plasma etching with the fluorine-based gas. The etch stop layer acts to prevent the etch from damaging the membrane layer.
REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger
patent: 5079112 (1992-01-01), Berger
patent: 5130213 (1992-07-01), Berger
patent: 5258246 (1993-11-01), Berger
patent: 5260151 (1993-11-01), Berger
patent: 5316879 (1994-05-01), Berger
patent: 5376505 (1994-12-01), Berger
patent: 5382498 (1995-01-01), Berger
patent: 5561008 (1996-10-01), Berger
patent: 5733688 (1998-03-01), Kato et al.
patent: 5798194 (1998-08-01), Nakasuji et al.
patent: 5899728 (1999-05-01), Mangat et al.
"Table 24 Product Critical Level Lithography Requirements", SIA Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, p. 85.
Kornblit Avinoam
Liddle James Alexander
Novembre Anthony Edward
Lucent Technologies - Inc.
Rittman Scott J.
Rosasco S.
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