Process for fabricating a high capacity memory cell

Details Process for fabricating a high capacity memory cell Process for fabricating a high capacity memory cell

1980-11-17

1983-02-15

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148187, H01L 2126

Patent

active

043732500

ABSTRACT:
A method of fabricating an array of high capacity memory cells comprises forming a transfer gate over each cell area spaced from an adjacent isolation region to define a storage region in the semiconductor surface between the transfer gate and isolation region and to define a bit line region on the other side of the transfer gate; forming a shallow ion layer of first conductivity type in the storage region self-aligned with the transfer gate; forming a deep ion layer of opposite conductivity type in the storage region self-aligned with the transfer gate; forming a storage gate over a portion of the storage region spaced laterally from the transfer gate to form a gap between the storage and transfer gates; and introducing ions of the first conductivity type into the portion of the storage region defined by the gap to at least neutralize some ions in the deep ion layer.

REFERENCES:
patent: 4060738 (1977-11-01), Tasch, Jr. et al.
patent: 4112575 (1978-09-01), Fu et al.
patent: 4115871 (1978-09-01), Varadi
patent: 4125933 (1978-11-01), Baldwin et al.
patent: 4141027 (1979-02-01), Baldwin et al.
patent: 4163243 (1979-07-01), Kamins et al.
patent: 4180826 (1979-12-01), Shappir
patent: 4183040 (1980-01-01), Rideout

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