Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-09-15
2008-10-14
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S183000
Reexamination Certificate
active
07436005
ABSTRACT:
The insulated-gate field-effect transistor includes a substrate surmounted by a layer of silicon-germanium alloy, the ratio of the germanium concentration to the silicon concentration of which increases towards the surface of the substrate. The transistor is formed on the active zone in the silicon-germanium alloy layer and lies between two isolating zones. The transistor includes a narrow heterostructure strained-semiconductor channel including a SiGe alloy layer in compression and a silicon layer in tension, extending between the gate and a dielectric block buried in the substrate.
REFERENCES:
patent: 6555839 (2003-04-01), Fitzgerald
patent: 6989570 (2006-01-01), Skotnicki et al.
patent: 2002/0089003 (2002-07-01), Lee
patent: 2 838 237 (2003-10-01), None
Tezuka et al.; “Novel Fully-Depleted SiGe-on-Insulator pMOSFETs with High-Mobility SiGe Surface Channels”, IEDM Technical Digest, Washington DC, Dec. 2-5, 2001, pp. 3361-3363, XP010575278.
Lee et al., “Performance Enhancement on Sub-70nm Strained Silicon SOI MOSFETs on Ultra-thin Thermally Mixed Strained Silicon/SiGe on Insulator (TM-SGOI) Substrate with Raised S/D”; IEDM Technical Digest, San Francisco, CA, Dec. 8-11, 2002, New York, NY, pp. 946-948; XP010626195.
Skotnicki, “Silicon on Nothing(SON)—Fabrication, Material and Devices”; Electrochemical Society Proceedings, New Jersey, US; vol. 2001, No. 3 dated Mar. 25, 2001, pp. 391-402; XP008014133.
Yee-Chia et al., “Enhanced Performance in Sub-100nm CMOSFETs Using Strained Epitaxial Silicon-Germanium”, Electron Devices Meeting, Dec. 10-13, 2000, Piscataway, New Jersey, USA; pp. 753-756; XP010531871.
Borel Stephan
Monfray Stéphane
Skotnicki Thomas
Allen Dyer Doppelt Milbrath & Gilchrist
Commissariat a l''Energie Atomique
Ho Anthony
Jackson Jerome
Jorgenson Lisa K.
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