Process for fabricating a heterojunction bipolar transistor

Details Process for fabricating a heterojunction bipolar transistor Process for fabricating a heterojunction bipolar transistor

1990-01-17

1991-02-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437184, 437225, 357 34, H01L 21331

Patent

active

049961667

ABSTRACT:
A heterojunction bipolar transistor includes a base layer and a wide bandgap emitter layer. A portion of the base layer is exposed, a base electrode is formed thereon and the active region of the emitter-base junction is limited inside a semiconductor body. As a result, surface recombination current generation of the peripheral region of the junction is prevented and the emitter efficiency is improved.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4716445 (1987-12-01), Sane
patent: 4839303 (1989-06-01), Tully
patent: 4839702 (1989-06-01), Grinberg
patent: 4872040 (1989-10-01), Jackson

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