Process for fabricating a device with a cavity formed at one end

Details Process for fabricating a device with a cavity formed at one end Process for fabricating a device with a cavity formed at one end

1998-04-16

2000-02-22

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438740, 216 24, H01L 2100, H01P 500

Patent

active

060280093

ABSTRACT:
A process is disclosed for fabricating a device with a cavity formed at one end thereof. A body is provided with a depression, and mask layer is applied to the surface of the body and the depression, the mask layer having a lower etch rate than the body. Near the depression, an opening is formed in the mask layer. Starting from the opening, the body is subjected to an isotropic etching process to form the cavity below the mask layer, with the mask layer being essentially preserved and forming in the area of the depression a structure extending into the cavity.

REFERENCES:
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5631988 (1997-05-01), Swirhun et al.
patent: 5683546 (1997-11-01), Manaka
G. Benz, Optoelektronische Mikrosysteme, Elektronik 21/1993, pp. 134 et seq.
A. Heuberger, "Mikromechanik", Springer Verlag 1991, pp. 432 et seq.
German Search Report for Application No. 197 16 480.3-33 dated May 5, 1997.

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