Process for fabricating a bipolar transistor utilizing sidewall

Details Process for fabricating a bipolar transistor utilizing sidewall Process for fabricating a bipolar transistor utilizing sidewall

1987-10-15

1988-11-08

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 33, 437162, H01L 21385, H01L 21425

Patent

active

047834226

ABSTRACT:
In a process for fabricating a semiconductor integrated circuit, a polysilicon layer deposited on the working surface of a silicon substrate is selectively oxidized and the polysilicon oxide layer is partially removed to form an opening. A chemical vapor deposition layer is formed on the entire surface and anisotropic etching of said chemical vapor deposition layer is performed to leave the chemical vapor deposition layer on the sidewall of the opening.

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