Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1996-03-18
1998-09-08
Goodrow, John
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
438753, B44C 122, H01L 21306
Patent
active
058040900
ABSTRACT:
An etching process for a silicon semiconductor substrate to produce a semiconductor pressure sensor or a semiconductor acceleration sensor. The etching process comprises the following steps: (a) carrying out an etching of the semiconductor without application of a voltage to the semiconductor so as to accomplish a pre-etching step, the pre-etching step including dipping the semiconductor in hydrazine hydrate; and (b) carrying out an electrochemical etching of the semiconductor by applying pre-etching step so as to accomplish a final etching step, the final etching step including dipping the semiconductor in an alkali system etching solution containing at least hydrazine (N.sub.2 H.sub.4), potassium hydroxide (KOH), and water (H.sub.2 O), the alkali system etching solution containing potassium hydroxide in an amount of not less than 0.3% by weight.
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Iwasaki Yasukazu
Kiritani Norihiko
Mitamura Makiko
Noguchi Takatoshi
Uchiyama Makoto
Goodrow John
Nissan Motor Co,. Ltd.
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