Process for etching semiconductor wafers

Details Process for etching semiconductor wafers Process for etching semiconductor wafers

1998-05-21

2000-04-04

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438753, 438974, 252 793, H01L 21306

Patent

active

060461179

ABSTRACT:
A process is taught for etching semiconductor wafers with an etching mixture comprising nitric and hydrofluoric acids and optionally a surfactant. To this mixture are added either more hydrofluoric acid, or more hydrofluoric and nitric acids, with the added acids having concentrations of at least 70% by weight. The use of concentrated acids reduces the loss of substrate material and extends etching bath life.

REFERENCES:
patent: 3966517 (1976-06-01), Claes et al.
patent: 4540465 (1985-09-01), Coggins et al.
patent: 5340437 (1994-08-01), Erk et al.
"Chemical Etching of Silicone", Journal of the Electrochemical Society, v 123, No. 12, Dec. 1976, pp. 1903-1909.
"Chemical Etching of Germanium in Solutions of HF, HNO.sub.3, H.sub.2 O and HC.sub.2 H.sub.3 O.sub.2," Journal of the Electrochemical Society, vol. 111, No. 2, Feb. 1964, pp. 196-201.
Patent Abstracts of Japan, vol. 1, No. 135 (E-001), Nov. 9, 1977 & JP 52071180A (Mitsubishi Electric).

Affiliated with

Also associated with

Rating

Process for etching semiconductor wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for etching semiconductor wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for etching semiconductor wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-364689