Process for etching a metal layer system

Details Process for etching a metal layer system Process for etching a metal layer system

2005-03-22

2005-03-22

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S010000, C438S017000, C438S720000, C438S737000

Reexamination Certificate

active

06869886

ABSTRACT:
The present invention relates to a process for etching a metal layer system. The metal layer system includes a first aluminum-containing layer, a second aluminum-containing layer, and an interlayer arranged between the two aluminum-containing layers. The interlayer consists of a material that is suitable for end-point detection. The etching process includes a first etching step, in which the upper aluminum-containing layer is etched using a first etching angle, and a second etching step, in which the lower aluminum-containing layer is etched using a second etching angle. The process switches between the first etching step and the second etching step as soon as the end-point detection has detected that the interlayer has been reached. Accordingly, the interlayer is arranged at a location at which it is intended for the process to switch from the first etching step to the second etching step.

REFERENCES:
patent: 5849641 (1998-12-01), Arnett et al.
patent: 5904569 (1999-05-01), Kitch
patent: 5968711 (1999-10-01), Lee et al.
patent: 6025268 (2000-02-01), Shen
patent: 6248252 (2001-06-01), Nguyen et al.
patent: 198 34 917 (1999-03-01), None
patent: 03-019225 (1991-01-01), None
patent: 05-347306 (1993-12-01), None
patent: 2001-230255 (2001-08-01), None

Affiliated with

Also associated with

Rating

Process for etching a metal layer system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for etching a metal layer system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for etching a metal layer system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3447477