Process for enhancing Ti:Al.sub.2 O.sub.3 tunable laser crystal

Details Process for enhancing Ti:Al.sub.2 O.sub.3 tunable laser crystal Process for enhancing Ti:Al.sub.2 O.sub.3 tunable laser crystal

1985-05-20

1986-05-06

Cooper, Jack

Compositions

Inorganic luminescent compositions

Compositions containing halogen; e.g., halides and oxyhalides

29576T, 148DIG3, 156DIG73, 2523014R, C09K 1136

Patent

active

045870357

ABSTRACT:
Annealing process for titanium doped sapphire tunable laser material to enhance lasing efficiency. The process comprises (I) heating the material in a vacuum of at least 1.times.10.sup.-6 torr at a temperature in the range of about 1850.degree. to 2,000.degree. C. for at least 48 hours and (II) cooling the material from its temperature in said range to 1500.degree. C. at a rate not exceeding 2.degree. C. per minute.

REFERENCES:
patent: 4416723 (1983-11-01), Pelts et al.
"New Developments in Solid-State Lasers"--Peter F. Moulton; Laser Focus, May 1983, pp. 83-86.

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