Process for eliminating effect of polysilicon stringers in semic

Details Process for eliminating effect of polysilicon stringers in semic Process for eliminating effect of polysilicon stringers in semic

1995-01-17

1997-06-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, 437233, H01L 218247

Patent

active

056396813

ABSTRACT:
A process for eliminating the effects of parasitic paths from stringers by forming diversionary paths in the overhangs in which the stringers are formed. The diversionary paths are selected such that the stringers formed in these paths are harmless to the operation of the circuit. For instance, in the formation of floating gate memory array where first and second polysilicon lines are formed are right angles to each other and then the first lines are etched in alignment with the second line to form the floating gates the invention is implemented by forming gaps in the first lines between the second lines. In this way, stringers formed from the second polysilicon layer are diverted. Consequently, the parasitic paths are paths in parallel with the second lines (word lines) instead of shorts between adjacent word lines.

REFERENCES:
patent: 4142926 (1979-03-01), Morgan
patent: 4536947 (1985-08-01), Bohr et al.
patent: 4780424 (1988-10-01), Holler et al.
patent: 4829351 (1989-05-01), Engles et al.
patent: 4888298 (1989-12-01), Rivaud et al.
patent: 5017265 (1991-05-01), Park et al.
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5070032 (1991-12-01), Yuam et al.
"Multi-Etchant Loading Effect and Silicon Etching in CIF3 and Related Mixtures", by Flam, Wang and Maydan, Journal of Electrochemical Society: Solid-State Science and Technology.

Affiliated with

Also associated with

Rating

Process for eliminating effect of polysilicon stringers in semic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for eliminating effect of polysilicon stringers in semic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for eliminating effect of polysilicon stringers in semic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2157457