Process for eliminating dislocations in the neck of a silicon si

Details Process for eliminating dislocations in the neck of a silicon si Process for eliminating dislocations in the neck of a silicon si

1996-07-03

1997-05-13

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117 14, 117921, C30B 1520

Patent

active

056288239

ABSTRACT:
A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.

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W. Dash "Growth of Silicon Crystals Free From Dislocations" Journal of Applied Physics, vol. 30, No. 4 (1959) pp. 459-474.
K. Kim et al. "Maximum Length of Large Diameter Czochralski Silicon Single Crystals At Fracture Stress Limit of Seed" Journal of Crystal Growth 100 (1990) pp. 527-528.
Borle et al. "Silicon Crystals Almost Free of Dislocations " Journal of Crystal Growth, vol. 8, No. 2 (1971) pp. 223-225.

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