Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1995-05-26
1999-09-07
Chea, Thorl
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430302, 430318, G03F 900
Patent
active
059485701
ABSTRACT:
Patterning of a layer of material that can be etched with gaseous mixture of oxygen, chlorine, and nitrogen as etchant species, such as a chromium or a chromium-containing compound layer, is accomplished by using a patterned organometallic resist, such as a polymer which contains silicon or germanium. Although gaseous mixtures of chlorine and oxygen etch chromium anisotropically. Some undercut of the chromium is still observed. This undercut is controlled or eliminated by adding nitrogen to the gas mixture. Layers of material that have been patterned in this way can then be used for photolithographic masks or reticles, for X-ray masks, for e-beam masks. or for direct patterning of other, underlying layers in semiconductor integrated circuits or other devices.
REFERENCES:
patent: 4370196 (1983-01-01), Vossen, Jr. et al.
"Patterning of X-Ray Masks Using the Negative-Acting Resist P(Si-CMS)" by Mixon, D. A. et al., J. Vac. Sci. Technol., B11(6), pp. 2834-2838 (Nov./Dec. 1993).
Jurgensen, C. W., et al., "Tungsten Patterning for 1:1 X-Ray Masks", J. Vac. Sci. Techoll B 9 (6), (Nov./Dec. 1991), pp. 3280-3286.
Allen, L. R., "Tapered Aluminum Interconnect Etch", J. Vac. Sci. Technol., A 12 (4), (Jul./Aug. 1994), pp. 1265-1268.
Novembre, A. E., et al., "Dry Etch Patterning of Chrome on Glass Optical Masks Using P(SI-CMS)Resist", SPIE, vol. 2087, Photomask Technology and Management (1993).
Tedesco, S., et al., "Dry Etching for High Resolution Maskmaking", SPIE, vol. 1264, Optical/Laser Microlithography III (1990), pp. 144-157.
Kornblit Avinoam
Novembre Anthony Edward
Botos Richard J.
Chea Thorl
Lucent Technologies - Inc.
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