Process for dry etching and vacuum treatment reactor

Details Process for dry etching and vacuum treatment reactor Process for dry etching and vacuum treatment reactor

1998-04-28

2000-10-03

Acquah, Samuel A.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438 9, 438698, 438706, 438710, 438720, 438905, 438935, 252 791, 252 793, 216 37, 216 58, 216 59, 216 67, E03C 1244, B44C 122, C03C 2506

Patent

active

06127271&

ABSTRACT:
A process for dry etching a surface within a vacuum treatment reactor includes evacuating the reactor, generating a glow discharge within said reactor, feeding a reactive etching gas into said reactor and reacting said etching gas within said reactor, removing gas with reaction products of said reacting from said reactor and installing an initial flow of said etching gas into said reactor and reducing said flow after a predetermined time span and during said reacting. The vacuum treatment reactor has a reactor with a pumping arrangement for evacuating the reactor. A glow discharge generating arrangement is connected to an electric power supply. A gas tank arrangement is connected to the reactor and has a reactive etching gas such as SF.sub.4.

REFERENCES:
patent: 5211790 (1993-05-01), Tatsumi
patent: 5310456 (1994-05-01), Kadomura
patent: 5474650 (1995-12-01), Kumihashi et al.
patent: 5515986 (1996-05-01), Turlot et al.
patent: 5693238 (1997-12-01), Schmitt et al.
patent: 5814564 (1998-09-01), Yao et al.
patent: 5882424 (1999-03-01), Taylor et al.

Affiliated with

Also associated with

Rating

Process for dry etching and vacuum treatment reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for dry etching and vacuum treatment reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for dry etching and vacuum treatment reactor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-194987