Process for dry cleaning wafer surfaces using a surface diffusio

Details Process for dry cleaning wafer surfaces using a surface diffusio Process for dry cleaning wafer surfaces using a surface diffusio

1995-12-28

1998-05-12

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 1, 134 2, 134 26, 134 30, B08B 700

Patent

active

057499756

ABSTRACT:
Disclosed is a method for dry cleaning a silicon surface on an in-process integrated circuit wafer which can be conducted in situ in a cluster tool or a reaction chamber where a previous etch or oxide removal step is conducted. The first step in the method is providing a silicon surface on the wafer which is to be cleaned of contaminates. Next, the wafer is located in a reaction chamber where the etch or oxide removal step is conducted. An adsorbent surface diffusion layer typically comprising a thin water or solvent layer in liquid state is then adhered to the silicon surface in the reaction chamber. Finally, the silicon surface is exposed to ultraviolet radiation and at least one gaseous cleaning agent while the surface diffusion layer is adhered on the silicon surface. A clean silicon surface results which does not exhibit the surface roughness typical of conventional dry cleaning processes.

REFERENCES:
patent: 4871417 (1989-10-01), Nishizawa et al.
patent: 5078832 (1992-01-01), Tanaka
patent: 5225355 (1993-07-01), Sugino et al.
Handbook of Semiconductor Wafer Cleaning Technology, Editor Werner Kern, Noyes Publications, 1993 pp. 25-29 and 52-67.
Sugino et al, Ultraviolet Exited Cl-radical Etching of Si through Native Oxide, J. Appl. Phys., vol. 76, No. 9, pp. 5498-5502, Nov. 1994.

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