Process for doping semiconductors

Metal treatment – Compositions – Heat treating

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204192N, 250492A, 357 91, H01L 21263, H01J 3730

Patent

active

041871243

ABSTRACT:
A process and apparatus for doping a substrate by ion implantation or discharge. The process comprises the steps of maintaining an electric discharge in an evacuated enclosure containing a gaseous compound of a dopant for creating ions of said dopant; extracting and accelerating a beam of said ions from said atmosphere toward said substrate under a voltage selected for achieving a predetermined doping profile; and circulating said substrate transversely to said beam.

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patent: 3583361 (1971-06-01), Laudel, Jr.
patent: 3908183 (1975-09-01), Ennis, Jr.
patent: 3999072 (1976-12-01), Takagi
patent: 4013891 (1977-03-01), Ko et al.
patent: 4021675 (1977-05-01), Shifrin
patent: 4035655 (1977-07-01), Guernet et al.
patent: 4074139 (1978-02-01), Pankove
patent: 4082636 (1978-04-01), Takagi

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