Process for doping semiconductors

Details Process for doping semiconductors Process for doping semiconductors

1982-05-21

1984-06-05

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 2504921, 357 91, H01L 21265, H01L 21324, H01L 21263

Patent

active

044526440

ABSTRACT:
The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.

REFERENCES:
patent: 4370176 (1983-01-01), Bruel
Wang et al., Thin Solid Films, 74, (1980), 239.
Shannon in Inst. Phys. Conf. Ser. No. #28, 1976, Chapter I, pp. 37-43.
Japanese Journal Applied Physics Supplement, vol. 16, No. 16-1, 1977.
IBM Technical Disclosure Bulletin, col. 23, No. 1, Jun. 1980.
IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980.
Nuclear Instruments and Methods, vol. 182/3, Apr./May 1981, Part I.

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