Process for doping semiconductors

Details Process for doping semiconductors Process for doping semiconductors

1981-01-23

1983-01-11

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21265, H01L 21324, H01L 21263

Patent

active

043680836

ABSTRACT:
The present invention relates to a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.

REFERENCES:
patent: 3562022 (1971-02-01), Shifrin
patent: 3925106 (1975-12-01), Ku et al.
patent: 4133701 (1979-01-01), Greenstein et al.
patent: 4181538 (1980-01-01), Narayan et al.
patent: 4187126 (1980-02-01), Radd et al.
patent: 4229232 (1980-10-01), Kirkpatrick
patent: 4292093 (1981-09-01), Ownby et al.
Chu et al., IBM-TDB, 21 (Jan. 1979) 3154.
Morikawa et al., Japan J. Appl. Phys. 16 (1977) 1281.
White et al., Appl. Phys. Letts. 33 (1978) 662.
Hirao et al., J. Appl. Phys. 50 (Jan. 1979) 193
Ishiwara et al., in Ion Implantation in Solids, 1976, Ed. Chernow et al., Plenum, N.Y., p. 375.
Gat et al., Appl. Phys. Letts. 32 (1978) 276.
Muller et al., Appl. Phys. Letts. 33 (1978) 287.
IBM Technical Disclosure Bulletin, vol. 20, No. 7, Dec. 1977, by H. J. Geipel, et al., "Ultra-thin layer transistors", pp. 2590-2591.
J. Electrochemical Society, vol. 126, No. 8, 1979, J. Golecki et al. "Transient annealing of GaAs by electron and laser beams".
Japanese Journal Applied Physics Supplement, vol. 16, No. 16-1, 1977.
IBM Technical Disclosure Bulletin, col. 23, No. 1, Jun. 1980.
IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980.
Nuclear Instruments and Methods, vol 182/3, Apr./May 1981.

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