Process for doping semiconductor crystals

Details Process for doping semiconductor crystals Process for doping semiconductor crystals

1979-03-09

1980-12-02

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, H01L 21225

Patent

active

042369487

ABSTRACT:
Semiconductor crystals, especially silicon semiconductor crystals, are doped using a solution to which there are added a silicon dioxide film forming material, a p or n doping material and organic solvent, by applying this solution to the surface of the semiconductor crystals drying and calcining while forming a cohesive, adhering coating layer, and diffusing the doping material into the semiconductor crystals in the calcining. The improvement is using as the silicon dioxide film forming components acidified solutions of partially hydrolyzed alkyl and/or polysilicates, the solutions having a pH between 2 and 6.

REFERENCES:
patent: 3084079 (1963-04-01), Harrington
patent: 3658584 (1972-04-01), Schmidt
patent: 3789023 (1974-01-01), Ritchie
patent: 3834939 (1974-09-01), Beyer et al.
patent: 4075044 (1978-02-01), Jager

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