Process for doping high purity silicon in an arc heater

Details Process for doping high purity silicon in an arc heater Process for doping high purity silicon in an arc heater

1977-04-14

1978-07-25

Edmundson, F.C.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

252 623E, 423350, B01K 100, C01B 3300, C04B 3500, H01L 306

Patent

active

041027663

ABSTRACT:
A method for doping solar grade silicon characterized by the steps of feeding into an arc heated gas stream a quantity of a metal reductant such as an alkali metal or an alkaline-earth metal and also feeding into the stream a quantity of a silicon halide and of a corresponding halide of a doping agent such as arsenic to react with the metal reductant to produce reaction products including a salt of a metal reductant and a mixture of liquid silicon and doping agent, and separating the mixture from the salt of the metal reductant.

REFERENCES:
patent: 2172969 (1939-09-01), Eringer
patent: 3192083 (1965-06-01), Sirtl
patent: 3212922 (1965-10-01), Sirtl
patent: 3649497 (1972-03-01), Kugler et al.
patent: 3915764 (1975-10-01), Noreika et al.

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