Process for doping field isolation regions in CMOS integrated ci

Details Process for doping field isolation regions in CMOS integrated ci Process for doping field isolation regions in CMOS integrated ci

1983-06-14

1984-11-13

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148 15, 357 42, H01L 2176

Patent

active

044817053

ABSTRACT:
A process for fabricating doped regions in a semiconductor substrate 10 beneath regions of oxidized silicon 21 includes the steps of fabricating a first mask 23 over the substrate 10 except where field regions 21 are desired, introducing p type impurity 30 in to the unmasked regions, oxidizing the silicon substrate 10 except where overlayed by the first mask 23 to form field regions 21, fabricating a second mask 28/23 over the semiconductor substrate 10 except for second field regions, introducing n conductivity type impurity 32 into the second field regions, and oxidizing the substrate to form second field regions 21.

REFERENCES:
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4244752 (1981-01-01), Henderson, Sr. et al.
patent: 4391650 (1983-07-01), Pfeifer et al.
patent: 4420872 (1983-12-01), Solo De Zaldivar

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