Process for doping crystals of wide band gap semiconductors

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 81, 437 82, 437965, 148DIG41, 148DIG64, H01L 21368

Patent

active

049046187

ABSTRACT:
Non-equilibrium impurity incorporation is used to dope hard-to-dope crystals of wide band gap semiconductors, such as zinc selenide and zinc telluride. This involves incorporating into the crystal a compensating pair of primary and secondary dopants, thereby to increase the solubility of either dopant alone in the crystals. Thereafter, the secondary more mobile dopant is removed preferentially, leaving the primary dopant predominant. This technique is used to dope zinc selenide p-type by the use of nitrogen as the primary dopant and lithium as the secondary dopant.

REFERENCES:
patent: 3578507 (1971-05-01), Chang et al.
patent: 4105478 (1978-08-01), Johnson
patent: 4422888 (1983-12-01), Stutius
patent: 4526632 (1985-07-01), Nishizawa et al.
patent: 4685979 (1987-08-01), Nishizawa
patent: 4725563 (1988-02-01), Nishizawa
patent: 4735910 (1988-04-01), Mitsuju et al.
patent: 4755856 (1988-07-01), Nishizawa
patent: 4783426 (1988-11-01), Nishizawa
"Li doped ZnSe and Problems of P-type Conduction", Neumark et al., Journal of Crystal Growth, vol. 59, pp. 189-195.
"Ionization Energy of the Shallow Nitrogen Acceptor in Zinc Selenide", Dean et al., Physical Review B, vol. 27, No. 4, pp. 2419-2428.
"Nitrogen as a Shallow Acceptor in ZnSe", by B. J. Fitzpatrick and P. M. Harnack, Extended Abstracts of the Electrochem. Soc. Mtg., vol. 81, (1981), pp. 408-409.
"Spectroscopic Studies of ZnSe Grown by Liquid Phase Epitaxy", B. J. Fitzpatrick et al., IEEE Transactions of Electron Devices, vol. Ed-28, No. 4, Apr. 1981, pp. 440-444.
D. G. Thomas et al., "Hydrogen as a Donor in Zinc Oxide", Dec. 1956, The Journal of Chemical Physics, vol. 25, No. 6, pp. 1136-1142.
R. J. Robinson et al., "p-n junction zinc sulfo-selenide and zinc selenide light-emitting diodes", Jul. 15, 1975, Applied Physics Letters, vol. 27, No. 2, pp. 74-76.
N. Magnea et al., "SEM and Photoluminescence Study of Li Segregation in Annealed Zinc Telluride", 1979, Solid State Communications, vol. 29, pp. 35-38.
Z. K. Kun, "The Variation of Residual Impurities in ZnSe Crystals Used in Light-Emitting Diode Fabrications", Feb. 1982, Journal of Applied Physics, vol. 53, No. 2, pp. 1248-1250.
G. F. Neumark et al., "Li Doped ZnSe and Problems of p-Type Conduction", 1982, Journal of Crystal Growth, vol. 59, pp. 189-195.
P. J. Dean et al., "Ionization Energy of the Shallow Nitrogen Acceptor in Zinc Selenide", Feb. 15, 1983, Physical Review B, vol. 27, No. 4, pp. 2419-2428.
C. Lee et al., "Low-Resistance Contacts to p-Type Li-Diffused CdTe", Dec. 1983, Journal of Applied Physics, vol. 54, No. 12, pp. 7041-7046.
A. Boudoukha et al, "Properties of Nitrogen Acceptor in CdTe: Energy Spectrum and Interaction", Journal of Crystal Growth, vol. 72, pp. 226-231.
J. Chevallier et al., Jul. 15, 1985, "Donor Neutralization in GaAs(Si) by Atomic Hydrogen", Applied Physics Letter, vol. 47, No. 2.
N. M. Johnson et al., "Interstitial Hydrogen and Neutralization of Shallow-Donor Impurities in Single-Crystal Silicon", Physical Review Letters, Feb. 17, 1986, vol. 56, No. 7, pp. 769-772.
S. J. Pearton et al., "Hydrogen in Crystalline Semiconductors", Applied Physics, 1987, vol. 43, pp. 153-195.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for doping crystals of wide band gap semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for doping crystals of wide band gap semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for doping crystals of wide band gap semiconductors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-174032

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.