Process for direct thermal nitridation of silicon semiconductor

Details Process for direct thermal nitridation of silicon semiconductor Process for direct thermal nitridation of silicon semiconductor

1979-10-01

1981-07-07

Edmundson, F. C.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

148 15, 204177, 423344, 427 531, 427 94, C01B 21068, B05D 306, H01L 700

Patent

active

042773202

ABSTRACT:
A process for the direct thermal nitridation of silicon semiconductor devices in which the semiconductor body is placed in an atmosphere of N.sub.2, at a temperature of less than 1000.degree. C. The N.sub.2 is activated by an RF electrical field which ionizes the nitrogen, which then combines with the silicon surface.

REFERENCES:
patent: 3419761 (1968-12-01), Pennebaker
patent: 3924024 (1975-12-01), Naber et al.
patent: 4056642 (1977-11-01), Saxena et al.
patent: 4181751 (1980-01-01), Hall et al.
patent: 4206190 (1980-06-01), Harvey et al.
Schnabel et al., Chem. Abs. vol. 70, Abstract 32743f (1969).
IBM Disclosure Bulletin by Hu et al., vol. 10, No. 2, Jul. 1967.
Kaiser et al., Chem. Abs., vol., Abstract 15685g (1959).

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