Process for direct nitriding of metals of low melting point

Details Process for direct nitriding of metals of low melting point Process for direct nitriding of metals of low melting point

1992-01-03

1994-05-24

Bell, Mark L.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 96, C04B 3556, C01B 2106

Patent

active

053146751

ABSTRACT:
Process for direct nitriding of metals of relatively low melting point with the aid of a nitrogen-containing gas, in which a powder of at least one of the metals is mixed with a refractory powder, the mixture is heated under an atmosphere of nitrogen-containing gas at atmospheric pressure until the start of a rapid and exothermic nitriding reaction, and this reaction, which proceeds at a temperature generally higher than that of the melting point of the metals without apparent melting being observed, is allowed to proceed until all of the metals have been consumed, in order to obtain a highly porous solid mass which is easy to grind and is based on metal nitrides or metal oxynitrides.

REFERENCES:
patent: 2929126 (1960-03-01), Bollack
patent: 3839541 (1974-10-01), Lumby et al.
patent: 4877759 (1989-10-01), Holt et al.
patent: 4944930 (1990-07-01), Holt et al.
patent: 4990180 (1991-02-01), Halverson et al.
patent: 5030600 (1991-07-01), Hida et al.

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