Process for diffusion of aluminum into a semiconductor

Details Process for diffusion of aluminum into a semiconductor Process for diffusion of aluminum into a semiconductor

1979-10-25

1981-05-12

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148187, 252950, 252951, H01L 21223

Patent

active

042669901

ABSTRACT:
A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube for diffusing aluminum into the semiconductor substrate. The semiconductor substrate having aluminum diffused therein is then subjected to heat treatment in an atmosphere of oxygen or nitrogen for a required length of time at a temperature higher than that used for the thermal diffusion. The above process provides the desired diffusion profile of aluminum, and a long lifetime of minority carriers in the substrate.

REFERENCES:
patent: 3143444 (1964-08-01), Lowe et al.
patent: 3834349 (1974-09-01), Dietze et al.
patent: 3948695 (1976-04-01), Ryugo et al.
patent: 3956023 (1976-05-01), Cline et al.
Kao, Electrochemical Technology, vol. 5, No. 3-4, Mar.-Apr. 1967, pp. 90-93. _

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